Articles about 'Systematic Defects'
November 2 2017 Issue 2 November, 2017
HOTSPOT DISCOVERY AND CONTROL
Hotspot Management: Process Window Discovery and Control
With advanced patterning techniques and shrinking design nodes come the proliferation of hotspots, and complex correlations between hotspots and increasingly narrow process margins. Additionally we see a change in the causes of hotspots; design systematics related to layout or OPC no longer dominate as the primary source of hotspots. We are seeing an increasing effect from process systematics, which are related to design but are induced by process related sources (wafer non-uniformity, process variations), or, in case of multi-patterning schemes, also by interactions between the different masks. These hotspot complexities are driving the need for process window discovery, expansion and control.
Winter Issue 2015 22 January, 2015
Addressing Thin Film Thickness Metrology Challenges of 14nm BEOL Layers
This paper describes a method to effectively monitor the film stack at different metal CMP process steps using a spectroscopic ellipsometer metrology tool. By proper modeling of the Cu dispersion and simulating the underlayer film information underneath the Cu pad, a single measurement recipe was developed which can be used to monitor each process step in the metal CMP process with stable and reliable results.
Winter Issue 2014 9 January, 2014
PRODUCT SPOTLIGHT: Broadband Plasma Defect Inspection
Advanced defect detection, metrology, and review systems are utilized by IC manufacturers to ramp new processes, increase yield and ultimately increase profitability. KLA’s unique broadband plasma inspectors offer the most capable technology for discovering all of the yield-critical defect types on leading-edge devices.