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Articles about 'Systematic Defects'

Current Issue

02 November, 2017

HOTSPOT DISCOVERY AND CONTROL

Hotspot Management: Process Window Discovery and Control

With advanced patterning techniques and shrinking design nodes come the proliferation of hotspots, and complex correlations between hotspots and increasingly narrow process margins. Additionally we see a change in the causes of hotspots; design systematics related to layout or OPC no longer dominate as the primary source of hotspots. We are seeing an increasing effect from process systematics, which are related to design but are induced by process related sources (wafer non-uniformity, process variations), or, in case of multi-patterning schemes, also by interactions between the different masks. These hotspot complexities are driving the need for process window discovery, expansion and control.

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Winter Issue 2014

09 January, 2014

PRODUCT SPOTLIGHT: Broadband Plasma Defect Inspection

Advanced defect detection, metrology, and review systems are utilized by IC manufacturers to ramp new processes, increase yield and ultimately increase profitability. KLA-Tencor’s unique broadband plasma inspectors offer the most capable technology for discovering all of the yield-critical defect types on leading-edge devices.

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Winter Issue 2015

22 January, 2015

WAFER METROLOGY

Addressing Thin Film Thickness Metrology Challenges of 14nm BEOL Layers

This paper describes a method to effectively monitor the film stack at different metal CMP process steps using a spectroscopic ellipsometer metrology tool. By proper modeling of the Cu dispersion and simulating the underlayer film information underneath the Cu pad, a single measurement recipe was developed which can be used to monitor each process step in the metal CMP process with stable and reliable results.

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