EUV LITHOGRAPHY
“EUV Is Coming”
After many years of hearing that EUV is almost ready for prime time, the tide is finally coming in. A decade of slow but steady progress has resulted in exposure tools that can expose on the order of 1,000 wafers a day on a regular basis. This may be shy of the requirements for high volume manufacturing (HVM), but it is certainly more than enough to support solid development programs and pilot line production. Almost all leading edge manufacturers have announced plans for early introduction in the 2018-19 timeframe, with HVM to follow within 1-2 years if the economics and technology are proven to be viable. Papers at the SPIE Photomask Technology (BACUS) + EUV Lithography conference in Monterey, SPIE Advanced Lithography 2017 conference and Photomask Japan 2017 symposium all highlighted the emerging maturity of EUV tools and processes, as well as the remaining challenges. It is certainly an exciting time for the EUV community, and a time of impending change for the mask making world.
ARTICLES
- Editorial: EUV Lithography and Overlay Control
- Classification and Printability Of EUV Mask Defects From SEM Images
- EUV Reticle Print Verification with Advanced Broadband Optical Wafer Inspection and E-Beam Review Systems
- 1X HP EUV Reticle Inspection with a 193nm Inspection System
- Darkfield Technology for EUV Mask Blank Inspection
- Modeling and Simulation of Low-Energy Electron Scattering in Organic and Inorganic EUV Photoresists
- Line Edge Roughness (LER) Performance Targets for EUV Lithography
- Detection of Printable EUV Mask Absorber Defects and Defect Adders by Full Chip Optical Inspection of EUV Patterned Wafers
