PRODUCT SPOTLIGHT: 5D Patterning Control Solution
KLA is driving improved patterning by addressing five elements of patterning control ─ the three geometrical dimensions of device structures, time-to-results and overall equipment efficiency. New systems drive performance throughout the fab ─ WaferSightTM PWG patterned wafer geometry measurement system, LMS IPRO6 reticle pattern placement metrology system, and K-T Analyzer® 9.0 advanced data analysis system.
PATTERNING CONTROL SOLUTIONS
Mask Contribution to Intra-Field Wafer Overlay
Shrinking wafer overlay budgets raise the importance of careful characterization and control of the contributing components. Traditionally, the mask contribution to wafer overlay has been estimated from measurement of a relatively small number of standard targets. However, comprehensive characterization of mask registration across a wide range of spatial frequencies and patterns can be used to obtain an accurate model to predict and correct for mask contribution to wafer overlay.
- Lithography Focus/Exposure Control and Corrections to Improve CDU at Post Etch Step
- In-line Focus Monitoring and Fast Determination of Best Focus Using Scatterometry
- Integrated Production Overlay Field-by-Field Control for Leading Edge Technology Nodes
- Innovative Techniques for Improving Overlay Accuracy by Using DCM (Device Correlated Metrology) Targets as Reference
- Innovative Fast Technique for Overlay Accuracy Estimation using Archer Self Calibration (ASC)
- Metrology of Advanced N14 Process Pattern Split at Lithography
- Investigation of Interactions Between Metrology and Lithography with a CD SEM Simulator
DIRECTED SELF-ASSEMBLY PROCESS CONTROL
Inspection of Directed Self-Assembly Defects
One of the most critical challenges for translating Directed Self-Assembly (DSA) into high volume manufacturing is to achieve low defect density in the DSA patterning process. Defect inspection capability is fundamental to defect reduction as it provides engineers with information on the numbers and types of defects. The DSA process causes certain defects that are unique as they are nearly planar and have very little material contrast. In this investigation, etching the DSA pattern into a silicon substrate structure to enhance defect signal and signal-to-noise ratio is studied.