Summer Issue 2008

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DEFECT MANAGEMENT

• • Advances in SEM Review for Efficient Generation of Meaningful Paretos

• • Using Design Based Binning to Improve Defect Excursion Control for 45nm Production

• • Defect Criticality Index (DCI): A New Methodology to Significantly Improve DOI Sampling Rate in a 45

• • A Novel Method of Characterizing Post-Laser Anneal Surface Conditions for the 45nm Process Technolog

• • Automatic Optimization of MEEF-driven Defect Disposition for Contamination Inspection Challenges

FAB ECONOMICS

• • A New Decision Paradigm for Comparing Patterned Wafer Inspectors

INSPECTION

• • Influence of Immersion Lithography on Wafer Edge Defectivity

METROLOGY

• • Predicting Electrical Measurements by Applying Scatterometry to Complex Spacer Structures Product News