Fall Issue 2011

25 October, 2011

SPOTLIGHT: ASMC 2010 Best Paper Award

Each year at the Advanced Semiconductor Manufacturing Conference (ASMC), best paper awards for the conference- one professional, one student – are selected by the technical and steering committee members and presented at the start of the next year’s event. This year at ASMC 2011 held in Saratoga Springs, NY, the best professional paper for ASMC 2010, sponsored by Entegris, was awarded to:

Sridhar Ramaswamy, Michael Guse, Michael Linnane, IBM Corporation; Nithin Yathapu, Bill Peterson KLA Corporation; Gerhard Lembach GLOBALFOUNDRIES for their paper, “Leveraging Blanket Wafer Film Inspection to Efficiently Characterize Root Cause for Lithographic Micro-Masking Patterning Defects”. Congratulations!

Automated SEM Offset Using Programmed Defects

Defect inspection plays a large role in the development and manufacture of semiconductor technologies. Defects detected in today’s inspection tools are generally a fraction of a micron and require SEM review to analyze and justify corrective measures. A methodology which allows quick and accurate alignment of the review SEM to the defects in the results file is presented and illustrated using the challenging example of PWQ wafers.

Inline Control of an Ultra Low-k ILD layer using Broadband Spectroscopic Ellipsometry

As chip dimensions are scaling down new challenges develop in the back-end-of-line. In order to keep the capacitance small while decreasing the volume of the inter-layer dielectric (ILD), new materials and processes have been introduced over the past years to lower the dielectric constant of the ILD layers. This paper discusses the development and implementation of a Broadband Spectroscopic Ellipsometer for inline process control of a SiCOH based porous ultra low-k film.

Automated Systematic Discovery for Development and Production

The general approach for systematic defect discovery has been with the use of modulated wafers investigating the litho process window. This approach is seen as essential for initial hot spot identification and process window qualification.
However the ability to process multiple wafers and lots with consistent design based binning provides a significant enabler for systematic defect discovery and monitoring from nominal wafers; to identify process interactions that cannot be fully simulated using a single wafer and to identify any process or device induced hot spots over time.

Advanced Excursion Control and Diagnostics for CMP Process Monitoring

CMP processes are generally well known and established critical steps in semiconductor manufacturing, but must be very closely monitored and controlled to maintain process uniformity and minimize process induced defects. CMP processes are generally monitored using a combination of blanket test wafers, short loop patterned wafers and product wafers, along with a variety of in-situ controls. This paper talks about the techniques demonstrated for defect excursion monitoring in CMP module using short loop test wafers and an advanced dark Field inspection tool.

Papers first published in the Proceedings of the 22nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2001), Saratoga Springs, NY, 2011.

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